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1 Ergebnisse
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Re-examination of the extraction of MOS interface-state den..:
Chen, Han-Ping
;
Yuan, Yu
;
Yu, Bo
...
Semiconductor Science and Technology. 28 (2013) 8 - p. 085008 , 2013
Link:
https://doi.org/10.1088/0268-1242/28/8/085008
RT Journal T1 <Title>Re-examination of the extraction of MOS interface-state density by C–V stretchout and conductance methods</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0268-1242_28_8_085008&Exemplar=1&LAN=DE A1 Chen, Han-Ping A1 Yuan, Yu A1 Yu, Bo A1 Chang, Chih-Sheng A1 Wann, Clement A1 Taur, Yuan PB IOP Publishing YR 2013 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 28 IS 8 SP 085008 LK http://dx.doi.org/https://doi.org/10.1088/0268-1242/28/8/085008 DO https://doi.org/10.1088/0268-1242/28/8/085008 SF ELIB - SuUB Bremen
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