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1 Ergebnisse
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Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si su..:
Zaidi, Z H
;
Lee, K B
;
Guiney, I
...
Semiconductor Science and Technology. 30 (2015) 10 - p. 105007 , 2015
Link:
https://doi.org/10.1088/0268-1242/30/10/105007
RT Journal T1 <Title>Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0268-1242_30_10_105007&Exemplar=1&LAN=DE A1 Zaidi, Z H A1 Lee, K B A1 Guiney, I A1 Qian, H A1 Jiang, S A1 Wallis, D J A1 Humphreys, C J A1 Houston, P A PB IOP Publishing YR 2015 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 30 IS 10 SP 105007 LK http://dx.doi.org/https://doi.org/10.1088/0268-1242/30/10/105007 DO https://doi.org/10.1088/0268-1242/30/10/105007 SF ELIB - SuUB Bremen
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