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Composition measurement of epitaxial ScxGa1−xN films:
Tsui, H C L
;
Goff, L E
;
Barradas, N P
...
Semiconductor Science and Technology. 31 (2016) 6 - p. 064002 , 2016
Link:
https://doi.org/10.1088/0268-1242/31/6/064002
RT Journal T1 <Title>Composition measurement of epitaxial ScxGa1−xN films</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0268-1242_31_6_064002&Exemplar=1&LAN=DE A1 Tsui, H C L A1 Goff, L E A1 Barradas, N P A1 Alves, E A1 Pereira, S A1 Palgrave, R G A1 Davies, R J A1 Beere, H E A1 Farrer, I A1 Ritchie, D A A1 Moram, M A PB IOP Publishing YR 2016 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 31 IS 6 SP 064002 LK http://dx.doi.org/https://doi.org/10.1088/0268-1242/31/6/064002 DO https://doi.org/10.1088/0268-1242/31/6/064002 SF ELIB - SuUB Bremen
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