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The effect of redeposition on the ion flux dependence of Si..:
Fan, Wen-bin
;
Ling, Li
;
Qi, Le-jun
...
Journal of Physics: Condensed Matter. 18 (2006) 13 - p. 3367-3375 , 2006
Link:
https://doi.org/10.1088/0953-8984/18/13/004
RT Journal T1 <Title>The effect of redeposition on the ion flux dependence of Si dot pattern formation during ion sputter erosion</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_0953-8984_18_13_004&Exemplar=1&LAN=DE A1 Fan, Wen-bin A1 Ling, Li A1 Qi, Le-jun A1 Li, Wei-qing A1 Sun, Hai-tong A1 Gu, Chang-xin A1 Zhao, You-yuan A1 Lu, Ming PB IOP Publishing YR 2006 SN 0953-8984 SN 1361-648X JF Journal of Physics: Condensed Matter VO 18 IS 13 SP 3367 OP 3375 LK http://dx.doi.org/https://doi.org/10.1088/0953-8984/18/13/004 DO https://doi.org/10.1088/0953-8984/18/13/004 SF ELIB - SuUB Bremen
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