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Analytical modeling of the recombination current in the bas..:
Bei-ping, Yan
;
Jin-sheng, Luo
Acta Physica Sinica (Overseas Edition). 5 (1996) 12 - p. 923-929 , 1996
Link:
https://doi.org/10.1088/1004-423x/5/12/005
RT Journal T1 <Title>Analytical modeling of the recombination current in the base-emitter space charge region of heterojunction bipolar transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1004-423x_5_12_005&Exemplar=1&LAN=DE A1 Bei-ping, Yan A1 Jin-sheng, Luo PB IOP Publishing YR 1996 SN 1004-423X JF Acta Physica Sinica (Overseas Edition) VO 5 IS 12 SP 923 OP 929 LK http://dx.doi.org/https://doi.org/10.1088/1004-423x/5/12/005 DO https://doi.org/10.1088/1004-423x/5/12/005 SF ELIB - SuUB Bremen
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