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1 Ergebnisse
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Dopant induced single electron tunneling within the sub-ban..:
Uddin, Wasi
;
Georgiev, Yordan M
;
Maity, Sarmistha
.
Journal of Physics D: Applied Physics. 50 (2017) 36 - p. 365104 , 2017
Link:
https://doi.org/10.1088/1361-6463/aa7eb9
RT Journal T1
Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6463_aa7eb9&Exemplar=1&LAN=DE A1 Uddin, Wasi A1 Georgiev, Yordan M A1 Maity, Sarmistha A1 Das, Samaresh PB IOP Publishing YR 2017 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 50 IS 36 SP 365104 LK http://dx.doi.org/https://doi.org/10.1088/1361-6463/aa7eb9 DO https://doi.org/10.1088/1361-6463/aa7eb9 SF ELIB - SuUB Bremen
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