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Role of vacancy defects in Al doped ZnO thin films for opto..:
Rotella, H
;
Mazel, Y
;
Brochen, S
...
Journal of Physics D: Applied Physics. 50 (2017) 48 - p. 485106 , 2017
Link:
https://doi.org/10.1088/1361-6463/aa920b
RT Journal T1 <Title>Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6463_aa920b&Exemplar=1&LAN=DE A1 Rotella, H A1 Mazel, Y A1 Brochen, S A1 Valla, A A1 Pautrat, A A1 Licitra, C A1 Rochat, N A1 Sabbione, C A1 Rodriguez, G A1 Nolot, E PB IOP Publishing YR 2017 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 50 IS 48 SP 485106 LK http://dx.doi.org/https://doi.org/10.1088/1361-6463/aa920b DO https://doi.org/10.1088/1361-6463/aa920b SF ELIB - SuUB Bremen
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