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Analysis of trap and recovery characteristics based on low-..:
Xu, X B
;
Li, B
;
Chen, Y Q
...
Journal of Physics D: Applied Physics. 53 (2020) 17 - p. 175101 , 2020
Link:
https://doi.org/10.1088/1361-6463/ab713a
RT Journal T1 <Title>Analysis of trap and recovery characteristics based on low-frequency noise for E-mode GaN HEMTs with p-GaN gate under repetitive short-circuit stress</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6463_ab713a&Exemplar=1&LAN=DE A1 Xu, X B A1 Li, B A1 Chen, Y Q A1 Wu, Z H A1 He, Z Y A1 En, Y F A1 Huang, Y PB IOP Publishing YR 2020 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 53 IS 17 SP 175101 LK http://dx.doi.org/https://doi.org/10.1088/1361-6463/ab713a DO https://doi.org/10.1088/1361-6463/ab713a SF ELIB - SuUB Bremen
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