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1 Ergebnisse
1
Effect of horizontal p–n junction on optoelectronics charac..:
Gao, Jiang-Dong
;
Zhang, Jian-Li
;
Quan, Zhi-Jue
...
Journal of Physics D: Applied Physics. 53 (2020) 33 - p. 335103 , 2020
Link:
https://doi.org/10.1088/1361-6463/ab87c4
RT Journal T1
Effect of horizontal p–n junction on optoelectronics characteristics in InGaN-based light-emitting diodes with V-shaped pits
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6463_ab87c4&Exemplar=1&LAN=DE A1 Gao, Jiang-Dong A1 Zhang, Jian-Li A1 Quan, Zhi-Jue A1 Pan, Shuan A1 Liu, Jun-Lin A1 Jiang, Feng-Yi PB IOP Publishing YR 2020 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 53 IS 33 SP 335103 LK http://dx.doi.org/https://doi.org/10.1088/1361-6463/ab87c4 DO https://doi.org/10.1088/1361-6463/ab87c4 SF ELIB - SuUB Bremen
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