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Defect characterization of heavy-ion irradiated AlInN/GaN o..:
Challa, S R
;
Witte, H
;
Schmidt, G
...
Journal of Physics D: Applied Physics. 55 (2021) 11 - p. 115107 , 2021
Link:
https://doi.org/10.1088/1361-6463/ac40b8
RT Journal T1 <Title>Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6463_ac40b8&Exemplar=1&LAN=DE A1 Challa, S R A1 Witte, H A1 Schmidt, G A1 Bläsing, J A1 Vega, N A1 Kristukat, C A1 Müller, N A A1 Debray, M E A1 Christen, J A1 Dadgar, A A1 Strittmatter, A PB IOP Publishing YR 2021 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 55 IS 11 SP 115107 LK http://dx.doi.org/https://doi.org/10.1088/1361-6463/ac40b8 DO https://doi.org/10.1088/1361-6463/ac40b8 SF ELIB - SuUB Bremen
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