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1 Ergebnisse
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Enhanced performance of normally-OFF GaN HEMTs with stair-s..:
Ye, Yankai
;
Zhang, Haochen
;
Xing, Zhanyong
...
Journal of Physics D: Applied Physics. 57 (2024) 34 - p. 345101 , 2024
Link:
https://doi.org/10.1088/1361-6463/ad4db1
RT Journal T1 <Title>Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6463_ad4db1&Exemplar=1&LAN=DE A1 Ye, Yankai A1 Zhang, Haochen A1 Xing, Zhanyong A1 Yang, Lei A1 Wang, Hu A1 Zhang, Mingshuo A1 Zuo, Chengjie A1 Sun, Haiding PB IOP Publishing YR 2024 SN 0022-3727 SN 1361-6463 JF Journal of Physics D: Applied Physics VO 57 IS 34 SP 345101 LK http://dx.doi.org/https://doi.org/10.1088/1361-6463/ad4db1 DO https://doi.org/10.1088/1361-6463/ad4db1 SF ELIB - SuUB Bremen
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