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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxi..:
Stoklas, R
;
Gregušová, D
;
Blaho, M
...
Semiconductor Science and Technology. 32 (2017) 4 - p. 045018 , 2017
Link:
https://doi.org/10.1088/1361-6641/aa5fcb
RT Journal T1 <Title>Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2by atomic layer deposition: leakage current and density of states reduction</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_aa5fcb&Exemplar=1&LAN=DE A1 Stoklas, R A1 Gregušová, D A1 Blaho, M A1 Fröhlich, K A1 Novák, J A1 Matys, M A1 Yatabe, Z A1 Kordoš, P A1 Hashizume, T PB IOP Publishing YR 2017 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 32 IS 4 SP 045018 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/aa5fcb DO https://doi.org/10.1088/1361-6641/aa5fcb SF ELIB - SuUB Bremen
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