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ALD TiOxas a top-gate dielectric and passivation layer for ..:
Pavlidis, S
;
Bayraktaroglu, B
;
Leedy, K
...
Semiconductor Science and Technology. 32 (2017) 11 - p. 114004 , 2017
Link:
https://doi.org/10.1088/1361-6641/aa8b33
RT Journal T1 <Title>ALD TiOxas a top-gate dielectric and passivation layer for InGaZnO115ISFETs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_aa8b33&Exemplar=1&LAN=DE A1 Pavlidis, S A1 Bayraktaroglu, B A1 Leedy, K A1 Henderson, W A1 Vogel, E A1 Brand, O PB IOP Publishing YR 2017 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 32 IS 11 SP 114004 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/aa8b33 DO https://doi.org/10.1088/1361-6641/aa8b33 SF ELIB - SuUB Bremen
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