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Study of recombination characteristics in MOCVD grown GaN e..:
Gaubas, E
;
Ceponis, T
;
Dobrovolskas, D
...
Semiconductor Science and Technology. 32 (2017) 12 - p. 125014 , 2017
Link:
https://doi.org/10.1088/1361-6641/aa96e8
RT Journal T1 <Title>Study of recombination characteristics in MOCVD grown GaN epi-layers on Si</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_aa96e8&Exemplar=1&LAN=DE A1 Gaubas, E A1 Ceponis, T A1 Dobrovolskas, D A1 Malinauskas, T A1 Meskauskaite, D A1 Miasojedovas, S A1 Mickevicius, J A1 Pavlov, J A1 Rumbauskas, V A1 Simoen, E A1 Zhao, M PB IOP Publishing YR 2017 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 32 IS 12 SP 125014 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/aa96e8 DO https://doi.org/10.1088/1361-6641/aa96e8 SF ELIB - SuUB Bremen
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