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THz transient photoconductivity of the III–V dilute nitride..:
Heyman, J N
;
Weiss, E M
;
Rollag, J R
...
Semiconductor Science and Technology. 33 (2018) 12 - p. 125009 , 2018
Link:
https://doi.org/10.1088/1361-6641/aae7c5
RT Journal T1 <Title>THz transient photoconductivity of the III–V dilute nitride GaP y As1−y−x N x</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_aae7c5&Exemplar=1&LAN=DE A1 Heyman, J N A1 Weiss, E M A1 Rollag, J R A1 Yu, K M A1 Dubon, O D A1 Kuang, Y J A1 Tu, C W A1 Walukiewicz, W PB IOP Publishing YR 2018 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 33 IS 12 SP 125009 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/aae7c5 DO https://doi.org/10.1088/1361-6641/aae7c5 SF ELIB - SuUB Bremen
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