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Electrical characterization of HVPE GaN containing differen..:
Gaubas, E
;
Čeponis, T
;
Deveikis, L
...
Semiconductor Science and Technology. 33 (2018) 12 - p. 125024 , 2018
Link:
https://doi.org/10.1088/1361-6641/aaecf0
RT Journal T1 <Title>Electrical characterization of HVPE GaN containing different concentrations of carbon dopants</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_aaecf0&Exemplar=1&LAN=DE A1 Gaubas, E A1 Čeponis, T A1 Deveikis, L A1 Meskauskaite, D A1 Pavlov, J A1 Rumbauskas, V A1 Bockowski, M A1 Lucznik, B PB IOP Publishing YR 2018 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 33 IS 12 SP 125024 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/aaecf0 DO https://doi.org/10.1088/1361-6641/aaecf0 SF ELIB - SuUB Bremen
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