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1 Ergebnisse
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Advantages of a buried-gate structure for graphene field-ef..:
Lee, Sang Kyung
;
Kim, Yun Ji
;
Heo, Sunwoo
...
Semiconductor Science and Technology. 34 (2019) 5 - p. 055010 , 2019
Link:
https://doi.org/10.1088/1361-6641/ab0d54
RT Journal T1
Advantages of a buried-gate structure for graphene field-effect transistor
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ab0d54&Exemplar=1&LAN=DE A1 Lee, Sang Kyung A1 Kim, Yun Ji A1 Heo, Sunwoo A1 Park, Woojin A1 Yoo, Tae Jin A1 Cho, Chunhum A1 Hwang, Hyeon Jun A1 Lee, Byoung Hun PB IOP Publishing YR 2019 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 34 IS 5 SP 055010 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ab0d54 DO https://doi.org/10.1088/1361-6641/ab0d54 SF ELIB - SuUB Bremen
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