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Stacking faults in plastically relaxed InGaN epilayers:
Moneta, J
;
Grzanka, E
;
Turski, H
..
Semiconductor Science and Technology. 35 (2020) 3 - p. 034003 , 2020
Link:
https://doi.org/10.1088/1361-6641/ab6bb1
RT Journal T1 <Title>Stacking faults in plastically relaxed InGaN epilayers</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ab6bb1&Exemplar=1&LAN=DE A1 Moneta, J A1 Grzanka, E A1 Turski, H A1 Skierbiszewski, C A1 Smalc-Koziorowska, J PB IOP Publishing YR 2020 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 35 IS 3 SP 034003 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ab6bb1 DO https://doi.org/10.1088/1361-6641/ab6bb1 SF ELIB - SuUB Bremen
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