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Improved DC performance and current stability of ultrathin-..:
Ozaki, S
;
Makiyama, K
;
Ohki, T
...
Semiconductor Science and Technology. 35 (2020) 3 - p. 035027 , 2020
Link:
https://doi.org/10.1088/1361-6641/ab708c
RT Journal T1 <Title>Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ab708c&Exemplar=1&LAN=DE A1 Ozaki, S A1 Makiyama, K A1 Ohki, T A1 Okamoto, N A1 Kumazaki, Y A1 Kotani, J A1 Kaneki, S A1 Nishiguchi, K A1 Nakamura, N A1 Hara, N A1 Hashizume, T PB IOP Publishing YR 2020 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 35 IS 3 SP 035027 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ab708c DO https://doi.org/10.1088/1361-6641/ab708c SF ELIB - SuUB Bremen
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