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1 Ergebnisse
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A novel 4H-SiC MOSFET for low switching loss and high-relia..:
Han, Zhonglin
;
Song, Guan
;
Bai, Yun
...
Semiconductor Science and Technology. 35 (2020) 8 - p. 085017 , 2020
Link:
https://doi.org/10.1088/1361-6641/ab8fbf
RT Journal T1 <Title>A novel 4H-SiC MOSFET for low switching loss and high-reliability applications</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ab8fbf&Exemplar=1&LAN=DE A1 Han, Zhonglin A1 Song, Guan A1 Bai, Yun A1 Chen, Hong A1 Liu, Xinyu A1 Lu, Jiang PB IOP Publishing YR 2020 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 35 IS 8 SP 085017 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ab8fbf DO https://doi.org/10.1088/1361-6641/ab8fbf SF ELIB - SuUB Bremen
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