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1 Ergebnisse
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A novel planar back-gate design to control the carrier conc..:
Scharnetzky, J
;
Meyer, J M
;
Berl, M
...
Semiconductor Science and Technology. 35 (2020) 8 - p. 085019 , 2020
Link:
https://doi.org/10.1088/1361-6641/ab9324
RT Journal T1 <Title>A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ab9324&Exemplar=1&LAN=DE A1 Scharnetzky, J A1 Meyer, J M A1 Berl, M A1 Reichl, C A1 Tiemann, L A1 Dietsche, W A1 Wegscheider, W PB IOP Publishing YR 2020 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 35 IS 8 SP 085019 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ab9324 DO https://doi.org/10.1088/1361-6641/ab9324 SF ELIB - SuUB Bremen
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