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Ultra-high silicon doped N-polar GaN contact layers grown b..:
Hatui, N
;
Krishna, A
;
Li, H
...
Semiconductor Science and Technology. 35 (2020) 9 - p. 095002 , 2020
Link:
https://doi.org/10.1088/1361-6641/ab9727
RT Journal T1 <Title>Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ab9727&Exemplar=1&LAN=DE A1 Hatui, N A1 Krishna, A A1 Li, H A1 Gupta, C A1 Romanczyk, B A1 Acker-James, D A1 Ahmadi, E A1 Keller, S A1 Mishra, U K PB IOP Publishing YR 2020 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 35 IS 9 SP 095002 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ab9727 DO https://doi.org/10.1088/1361-6641/ab9727 SF ELIB - SuUB Bremen
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