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1 Ergebnisse
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A trench/planar SiC MOSFET integrated with SBD (TPSBD) for ..:
Han, Zhonglin
;
Bai, Yun
;
Chen, Hong
...
Semiconductor Science and Technology. 35 (2020) 10 - p. 105002 , 2020
Link:
https://doi.org/10.1088/1361-6641/aba41c
RT Journal T1 <Title>A trench/planar SiC MOSFET integrated with SBD (TPSBD) for low reverse recovery charge and low switching loss</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_aba41c&Exemplar=1&LAN=DE A1 Han, Zhonglin A1 Bai, Yun A1 Chen, Hong A1 Li, Chengzhan A1 Lu, Jiang A1 Song, Guan A1 Liu, Xinyu PB IOP Publishing YR 2020 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 35 IS 10 SP 105002 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/aba41c DO https://doi.org/10.1088/1361-6641/aba41c SF ELIB - SuUB Bremen
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