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Mass production-ready characteristics of AlGaN/AlN/GaN high..:
Ikejiri, Keitaro
;
Hiroyama, Yuichi
;
Kasahara, Kenji
...
Semiconductor Science and Technology. 36 (2020) 1 - p. 014004 , 2020
Link:
https://doi.org/10.1088/1361-6641/abc3da
RT Journal T1
Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_abc3da&Exemplar=1&LAN=DE A1 Ikejiri, Keitaro A1 Hiroyama, Yuichi A1 Kasahara, Kenji A1 Hirooka, Chihiro A1 Osada, Takenori A1 Tanaka, Mitsuhiro A1 Takada, Tomoyuki A1 Egawa, Takashi PB IOP Publishing YR 2020 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 36 IS 1 SP 014004 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/abc3da DO https://doi.org/10.1088/1361-6641/abc3da SF ELIB - SuUB Bremen
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