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Characterization of defect states in Mg-doped GaN-on-Si p+n..:
Lechaux, Y
;
Minj, A
;
Méchin, L
...
Semiconductor Science and Technology. 36 (2020) 2 - p. 024002 , 2020
Link:
https://doi.org/10.1088/1361-6641/abcb19
RT Journal T1 <Title>Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_abcb19&Exemplar=1&LAN=DE A1 Lechaux, Y A1 Minj, A A1 Méchin, L A1 Liang, H A1 Geens, K A1 Zhao, M A1 Simoen, E A1 Guillet, B PB IOP Publishing YR 2020 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 36 IS 2 SP 024002 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/abcb19 DO https://doi.org/10.1088/1361-6641/abcb19 SF ELIB - SuUB Bremen
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