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1 Ergebnisse
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Smooth plasma etching of GeSn nanowires for gate-all-around..:
Eustache, E
;
Mahjoub, M A
;
Guerfi, Y
...
Semiconductor Science and Technology. 36 (2021) 6 - p. 065018 , 2021
Link:
https://doi.org/10.1088/1361-6641/abfbb5
RT Journal T1 <Title>Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_abfbb5&Exemplar=1&LAN=DE A1 Eustache, E A1 Mahjoub, M A A1 Guerfi, Y A1 Labau, S A1 Aubin, J A1 Hartmann, J M A1 Bassani, F A1 David, S A1 Salem, B PB IOP Publishing YR 2021 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 36 IS 6 SP 065018 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/abfbb5 DO https://doi.org/10.1088/1361-6641/abfbb5 SF ELIB - SuUB Bremen
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