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1 Ergebnisse
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Donor implanted back-gates in GaAs for MBE-grown highest mo..:
Scharnetzky, J
;
Baumann, P
;
Reichl, C
...
Semiconductor Science and Technology. 36 (2021) 8 - p. 085012 , 2021
Link:
https://doi.org/10.1088/1361-6641/ac0d9a
RT Journal T1 <Title>Donor implanted back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ac0d9a&Exemplar=1&LAN=DE A1 Scharnetzky, J A1 Baumann, P A1 Reichl, C A1 Karl, H A1 Dietsche, W A1 Wegscheider, W PB IOP Publishing YR 2021 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 36 IS 8 SP 085012 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ac0d9a DO https://doi.org/10.1088/1361-6641/ac0d9a SF ELIB - SuUB Bremen
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