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1 Ergebnisse
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Effect of an inserted Al2O3 passivation layer for atomic la..:
Xu, Qian
;
Ding, Yao-Xin
;
Zheng, Zhi-Wei
..
Semiconductor Science and Technology. 36 (2021) 12 - p. 125015 , 2021
Link:
https://doi.org/10.1088/1361-6641/ac2fb6
RT Journal T1 <Title>Effect of an inserted Al2O3 passivation layer for atomic layer deposited HfO2 on indium phosphide</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ac2fb6&Exemplar=1&LAN=DE A1 Xu, Qian A1 Ding, Yao-Xin A1 Zheng, Zhi-Wei A1 Ying, Lei-Ying A1 Zhang, Bao-Ping PB IOP Publishing YR 2021 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 36 IS 12 SP 125015 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ac2fb6 DO https://doi.org/10.1088/1361-6641/ac2fb6 SF ELIB - SuUB Bremen
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