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1 Ergebnisse
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The influence of lightly doped p-GaN cap layer on p-GaN/AlG..:
Liu, Kai
;
Wang, Runhao
;
Wang, Chong
...
Semiconductor Science and Technology. 37 (2022) 7 - p. 075005 , 2022
Link:
https://doi.org/10.1088/1361-6641/ac643f
RT Journal T1 <Title>The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ac643f&Exemplar=1&LAN=DE A1 Liu, Kai A1 Wang, Runhao A1 Wang, Chong A1 Zheng, Xuefeng A1 Ma, Xiaohua A1 Bai, Junchun A1 Cheng, Bin A1 Liu, Ruiyu A1 Li, Ang A1 Zhao, Yaopeng A1 Hao, Yue PB IOP Publishing YR 2022 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 37 IS 7 SP 075005 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ac643f DO https://doi.org/10.1088/1361-6641/ac643f SF ELIB - SuUB Bremen
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