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1 Ergebnisse
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The effect of the barrier thickness on DC and RF performanc..:
Wang, Chun
;
Hsu, Heng-Tung
;
Lin, Jui-Lung
...
Semiconductor Science and Technology. 38 (2023) 7 - p. 074004 , 2023
Link:
https://doi.org/10.1088/1361-6641/acd13c
RT Journal T1
The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_acd13c&Exemplar=1&LAN=DE A1 Wang, Chun A1 Hsu, Heng-Tung A1 Lin, Jui-Lung A1 Weng, You-Chen A1 Tsao, Yi-Fan A1 Wang, Yuan A1 Chang, Edward Yi PB IOP Publishing YR 2023 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 38 IS 7 SP 074004 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/acd13c DO https://doi.org/10.1088/1361-6641/acd13c SF ELIB - SuUB Bremen
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