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1 Ergebnisse
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Surface defects in 4H-SiC: properties, characterizations an..:
Mao, Weiwei
;
Cui, Can
;
Xiong, Huifan
...
Semiconductor Science and Technology. 38 (2023) 7 - p. 073001 , 2023
Link:
https://doi.org/10.1088/1361-6641/acd4df
RT Journal T1 <Title>Surface defects in 4H-SiC: properties, characterizations and passivation schemes</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_acd4df&Exemplar=1&LAN=DE A1 Mao, Weiwei A1 Cui, Can A1 Xiong, Huifan A1 Zhang, Naifu A1 Liu, Shuai A1 Dou, Maofeng A1 Song, Lihui A1 Yang, Deren A1 Pi, Xiaodong PB IOP Publishing YR 2023 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 38 IS 7 SP 073001 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/acd4df DO https://doi.org/10.1088/1361-6641/acd4df SF ELIB - SuUB Bremen
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