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1 Ergebnisse
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Selective removal of 4H-SiC porous structures caused by pho..:
Li, Yunkai
;
Zhao, Siqi
;
Yang, Shangyu
...
Semiconductor Science and Technology. 38 (2023) 11 - p. 115001 , 2023
Link:
https://doi.org/10.1088/1361-6641/acf72e
RT Journal T1
Selective removal of 4H-SiC porous structures caused by photoelectric chemical etching via post oxidation annealing
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_acf72e&Exemplar=1&LAN=DE A1 Li, Yunkai A1 Zhao, Siqi A1 Yang, Shangyu A1 Guo, Ning A1 Yuan, Weilong A1 Pei, Yicheng A1 Yan, Guoguo A1 Liu, Xingfang PB IOP Publishing YR 2023 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 38 IS 11 SP 115001 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/acf72e DO https://doi.org/10.1088/1361-6641/acf72e SF ELIB - SuUB Bremen
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