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Corrigendum: Importance of shallow hydrogenic dopants and m..:
Zhang, Yuewei
;
Speck, James S
Semiconductor Science and Technology. 38 (2023) 11 - p. 119501 , 2023
Link:
https://doi.org/10.1088/1361-6641/acfe90
RT Journal T1 <Title>Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 125018)</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_acfe90&Exemplar=1&LAN=DE A1 Zhang, Yuewei A1 Speck, James S PB IOP Publishing YR 2023 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 38 IS 11 SP 119501 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/acfe90 DO https://doi.org/10.1088/1361-6641/acfe90 SF ELIB - SuUB Bremen
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