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1 Ergebnisse
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Fully-vertical GaN-on-SiC Schottky barrier diode with ultra..:
Sun, Yuting
;
Feng, Yuxia
;
Wei, Jia
...
Semiconductor Science and Technology. 39 (2024) 2 - p. 025013 , 2024
Link:
https://doi.org/10.1088/1361-6641/ad1f44
RT Journal T1 <Title>Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ad1f44&Exemplar=1&LAN=DE A1 Sun, Yuting A1 Feng, Yuxia A1 Wei, Jia A1 Wang, Maojun A1 Yang, Xuelin A1 Mei, Wenkang A1 Yang, Yufei A1 Shen, Bo PB IOP Publishing YR 2024 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 39 IS 2 SP 025013 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ad1f44 DO https://doi.org/10.1088/1361-6641/ad1f44 SF ELIB - SuUB Bremen
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