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1 Ergebnisse
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Effects of spacer layer thickness in InAlN/GaN double-chann..:
Guo, Si-Yin
;
Zhu, Qing
;
Chen, Yi-Lin
...
Semiconductor Science and Technology. 39 (2024) 6 - p. 065014 , 2024
Link:
https://doi.org/10.1088/1361-6641/ad4a2d
RT Journal T1 <Title>Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ad4a2d&Exemplar=1&LAN=DE A1 Guo, Si-Yin A1 Zhu, Qing A1 Chen, Yi-Lin A1 Zhang, Meng A1 Mi, Min-Han A1 Zhu, Jie-Jie A1 Lei, Yi-Min A1 An, Si-Rui A1 Lu, Jia-Ni A1 Gong, Can A1 Ma, Xiao-Hua PB IOP Publishing YR 2024 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology VO 39 IS 6 SP 065014 LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ad4a2d DO https://doi.org/10.1088/1361-6641/ad4a2d SF ELIB - SuUB Bremen
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