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1 Ergebnisse
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Electrical characteristics and trap signatures for Schottky..:
Kumari, Shikha
;
Singh, Rashmi
;
Kumar, Shivam
...
Semiconductor Science and Technology. , 2024
Link:
https://doi.org/10.1088/1361-6641/ad4a65
RT Journal T1
Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1361-6641_ad4a65&Exemplar=1&LAN=DE A1 Kumari, Shikha A1 Singh, Rashmi A1 Kumar, Shivam A1 Murty, N V L Narasimha A1 Planson, Dominique A1 Raynaud, Christophe A1 Sonneville, Camille A1 Morel, Hervé A1 Phung, Luong Viet A1 Ngo, Thi Huong A1 de Mierry, Philippe A1 Frayssinet, Eric A1 Cordier, Yvon A1 Maher, Hassan A1 Sommet, Raphael A1 Nallatamby, Jean-Christophe A1 Raja, P. Vigneshwara PB IOP Publishing YR 2024 SN 0268-1242 SN 1361-6641 JF Semiconductor Science and Technology LK http://dx.doi.org/https://doi.org/10.1088/1361-6641/ad4a65 DO https://doi.org/10.1088/1361-6641/ad4a65 SF ELIB - SuUB Bremen
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