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1 Ergebnisse
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Study of 4H-SiC junction barrier Schottky diode using field..:
Feng-Ping, Chen
;
Yu-Ming, Zhang
;
Hong-Liang, Lü
..
Chinese Physics B. 19 (2010) 9 - p. 097107 , 2010
Link:
https://doi.org/10.1088/1674-1056/19/9/097107
RT Journal T1
Study of 4H-SiC junction barrier Schottky diode using field guard ring termination
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1674-1056_19_9_097107&Exemplar=1&LAN=DE A1 Feng-Ping, Chen A1 Yu-Ming, Zhang A1 Hong-Liang, Lü A1 Yi-Men, Zhang A1 Jian-Hua, Huang PB IOP Publishing YR 2010 SN 1674-1056 JF Chinese Physics B VO 19 IS 9 SP 097107 LK http://dx.doi.org/https://doi.org/10.1088/1674-1056/19/9/097107 DO https://doi.org/10.1088/1674-1056/19/9/097107 SF ELIB - SuUB Bremen
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