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1 Ergebnisse
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Molecular beam epitaxy growth of GaAs on an offcut Ge subst..:
He, Ji-Fang
;
Niu, Zhi-Chuan
;
Chang, Xiu-Ying
...
Chinese Physics B. 20 (2011) 1 - p. 018102 , 2011
Link:
https://doi.org/10.1088/1674-1056/20/1/018102
RT Journal T1
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1674-1056_20_1_018102&Exemplar=1&LAN=DE A1 He, Ji-Fang A1 Niu, Zhi-Chuan A1 Chang, Xiu-Ying A1 Ni, Hai-Qiao A1 Zhu, Yan A1 Li, Mi-Feng A1 Shang, Xiang-Jun PB IOP Publishing YR 2011 SN 1674-1056 JF Chinese Physics B VO 20 IS 1 SP 018102 LK http://dx.doi.org/https://doi.org/10.1088/1674-1056/20/1/018102 DO https://doi.org/10.1088/1674-1056/20/1/018102 SF ELIB - SuUB Bremen
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