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1 Ergebnisse
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Characterization of Al2O3/GaN/AlGaN/GaN metal—insulator—sem..:
Ma, Xiao-Hua
;
Pan, Cai-Yuan
;
Yang, Li-Yuan
...
Chinese Physics B. 20 (2011) 2 - p. 027304 , 2011
Link:
https://doi.org/10.1088/1674-1056/20/2/027304
RT Journal T1
Characterization of Al2O3/GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1674-1056_20_2_027304&Exemplar=1&LAN=DE A1 Ma, Xiao-Hua A1 Pan, Cai-Yuan A1 Yang, Li-Yuan A1 Yu, Hui-You A1 Yang, Ling A1 Quan, Si A1 Wang, Hao A1 Zhang, Jin-Cheng A1 Hao, Yue PB IOP Publishing YR 2011 SN 1674-1056 JF Chinese Physics B VO 20 IS 2 SP 027304 LK http://dx.doi.org/https://doi.org/10.1088/1674-1056/20/2/027304 DO https://doi.org/10.1088/1674-1056/20/2/027304 SF ELIB - SuUB Bremen
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