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1 Ergebnisse
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A unified charge-based model for SOI MOSFETs applicable fro..:
Zhang, Jian
;
He, Jin
;
Zhou, Xing-Ye
...
Chinese Physics B. 21 (2012) 4 - p. 047303 , 2012
Link:
https://doi.org/10.1088/1674-1056/21/4/047303
RT Journal T1
A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1674-1056_21_4_047303&Exemplar=1&LAN=DE A1 Zhang, Jian A1 He, Jin A1 Zhou, Xing-Ye A1 Zhang, Li-Ning A1 Ma, Yu-Tao A1 Chen, Qin A1 Zhang, Xu-Kai A1 Yang, Zhang A1 Wang, Rui-Fei A1 Han, Yu A1 Chan, Mansun PB IOP Publishing YR 2012 SN 1674-1056 JF Chinese Physics B VO 21 IS 4 SP 047303 LK http://dx.doi.org/https://doi.org/10.1088/1674-1056/21/4/047303 DO https://doi.org/10.1088/1674-1056/21/4/047303 SF ELIB - SuUB Bremen
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