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1 Ergebnisse
1
Utilizing a shallow trench isolation parasitic transistor t..:
Peng, Chao
;
Hu, Zhi-Yuan
;
Ning, Bing-Xu
...
Chinese Physics B. 23 (2014) 9 - p. 090702 , 2014
Link:
https://doi.org/10.1088/1674-1056/23/9/090702
RT Journal T1
Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1674-1056_23_9_090702&Exemplar=1&LAN=DE A1 Peng, Chao A1 Hu, Zhi-Yuan A1 Ning, Bing-Xu A1 Huang, Hui-Xiang A1 Fan, Shuang A1 Zhang, Zheng-Xuan A1 Bi, Da-Wei A1 En, Yun-Fei PB IOP Publishing YR 2014 SN 1674-1056 JF Chinese Physics B VO 23 IS 9 SP 090702 LK http://dx.doi.org/https://doi.org/10.1088/1674-1056/23/9/090702 DO https://doi.org/10.1088/1674-1056/23/9/090702 SF ELIB - SuUB Bremen
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