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1 Ergebnisse
1
Near-interface oxide traps in 4H–SiC MOS structures fabrica..:
Sun, Qiu-Jie
;
Zhang, Yu-Ming
;
Song, Qing-Wen
...
Chinese Physics B. 26 (2017) 12 - p. 127701 , 2017
Link:
https://doi.org/10.1088/1674-1056/26/12/127701
RT Journal T1
Near-interface oxide traps in 4H–SiC MOS structures fabricated with and without annealing in NO
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1674-1056_26_12_127701&Exemplar=1&LAN=DE A1 Sun, Qiu-Jie A1 Zhang, Yu-Ming A1 Song, Qing-Wen A1 Tang, Xiao-Yan A1 Zhang, Yi-Meng A1 Li, Cheng-Zhan A1 Zhao, Yan-Li A1 Zhang, Yi-Men PB IOP Publishing YR 2017 SN 1674-1056 JF Chinese Physics B VO 26 IS 12 SP 127701 LK http://dx.doi.org/https://doi.org/10.1088/1674-1056/26/12/127701 DO https://doi.org/10.1088/1674-1056/26/12/127701 SF ELIB - SuUB Bremen
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