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1 Ergebnisse
1
Dependence of limited radiative recombination rate of InGaN..:
Gao, Jiang-Dong
;
Zhang, Jian-Li
;
Quan, Zhi-Jue
..
Chinese Physics B. 29 (2020) 4 - p. 047802 , 2020
Link:
https://doi.org/10.1088/1674-1056/ab790a
RT Journal T1
Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection*
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1674-1056_ab790a&Exemplar=1&LAN=DE A1 Gao, Jiang-Dong A1 Zhang, Jian-Li A1 Quan, Zhi-Jue A1 Liu, Jun-Lin A1 Jiang, Feng-Yi PB IOP Publishing YR 2020 SN 1674-1056 JF Chinese Physics B VO 29 IS 4 SP 047802 LK http://dx.doi.org/https://doi.org/10.1088/1674-1056/ab790a DO https://doi.org/10.1088/1674-1056/ab790a SF ELIB - SuUB Bremen
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