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1 Ergebnisse
1
Lateral depletion-mode 4H-SiC n-channel junction field-effe..:
Liu, Si-Cheng
;
Tang, Xiao-Yan
;
Song, Qing-Wen
...
Chinese Physics B. 30 (2021) 2 - p. 028503 , 2021
Link:
https://doi.org/10.1088/1674-1056/abc0df
RT Journal T1
Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C*
UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1674-1056_abc0df&Exemplar=1&LAN=DE A1 Liu, Si-Cheng A1 Tang, Xiao-Yan A1 Song, Qing-Wen A1 Yuan, Hao A1 Zhang, Yi-Meng A1 Zhang, Yi-Men A1 Zhang, Yu-Ming PB IOP Publishing YR 2021 SN 1674-1056 JF Chinese Physics B VO 30 IS 2 SP 028503 LK http://dx.doi.org/https://doi.org/10.1088/1674-1056/abc0df DO https://doi.org/10.1088/1674-1056/abc0df SF ELIB - SuUB Bremen
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