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Variation of etching time on formation of porous silicon on..:
Sehati
;
Wijayanti, S
;
Suryana, R
Journal of Physics: Conference Series. 1825 (2021) 1 - p. 012067 , 2021
Link:
https://doi.org/10.1088/1742-6596/1825/1/012067
RT Journal T1 <Title>Variation of etching time on formation of porous silicon on p-type Si (111) using electrochemical anodization method</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1742-6596_1825_1_012067&Exemplar=1&LAN=DE A1 Sehati A1 Wijayanti, S A1 Suryana, R PB IOP Publishing YR 2021 SN 1742-6588 SN 1742-6596 JF Journal of Physics: Conference Series VO 1825 IS 1 SP 012067 LK http://dx.doi.org/https://doi.org/10.1088/1742-6596/1825/1/012067 DO https://doi.org/10.1088/1742-6596/1825/1/012067 SF ELIB - SuUB Bremen
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