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1 Ergebnisse
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Monte Carlo model for the analysis and development of III-V..:
Talbo, V
;
Mateos, J
;
González, T
...
Journal of Physics: Conference Series. 647 (2015) - p. 012056 , 2015
Link:
https://doi.org/10.1088/1742-6596/647/1/012056
RT Journal T1 <Title>Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1088_1742-6596_647_1_012056&Exemplar=1&LAN=DE A1 Talbo, V A1 Mateos, J A1 González, T A1 Lechaux, Y A1 Wichmann, N A1 Bollaert, S A1 Vasallo, B G PB IOP Publishing YR 2015 SN 1742-6588 SN 1742-6596 JF Journal of Physics: Conference Series VO 647 SP 012056 LK http://dx.doi.org/https://doi.org/10.1088/1742-6596/647/1/012056 DO https://doi.org/10.1088/1742-6596/647/1/012056 SF ELIB - SuUB Bremen
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