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Band-bending Analysis of Metal-Oxide-Semiconductor (MOS) In..:
Fukushima, Y
;
Mori, D
;
Terao, Y
..
Microscopy and Microanalysis. 29 (2023) Supplement_1 - p. 1338-1339 , 2023
Link:
https://doi.org/10.1093/micmic/ozad067.686
RT Journal T1 <Title>Band-bending Analysis of Metal-Oxide-Semiconductor (MOS) Interface by In Situ Biasing Electron Holography</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1093_micmic_ozad067.686&Exemplar=1&LAN=DE A1 Fukushima, Y A1 Mori, D A1 Terao, Y A1 Yamamoto, K A1 Takigawa, A PB Oxford University Press (OUP) YR 2023 SN 1431-9276 SN 1435-8115 JF Microscopy and Microanalysis VO 29 IS Supplement_1 SP 1338 OP 1339 LK http://dx.doi.org/https://doi.org/10.1093/micmic/ozad067.686 DO https://doi.org/10.1093/micmic/ozad067.686 SF ELIB - SuUB Bremen
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