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1 Ergebnisse
1
S-TAT Leakage Current in Partial Isolation Type Saddle-FinF..:
Park, Jin Hyo
;
Kim, Geon
;
Kim, Dong Yeong
...
IEEE Access. 9 (2021) - p. 111567-111575 , 2021
Link:
https://doi.org/10.1109/access.2021.3102687
RT Journal T1
S-TAT Leakage Current in Partial Isolation Type Saddle-FinFET (Pi-FinFET)s
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_access.2021.3102687&Exemplar=1&LAN=DE A1 Park, Jin Hyo A1 Kim, Geon A1 Kim, Dong Yeong A1 Kim, Su Yeon A1 Yoo, Sunyong A1 Lee, Myoung Jin PB Institute of Electrical and Electronics Engineers (IEEE) YR 2021 SN 2169-3536 JF IEEE Access VO 9 SP 111567 OP 111575 LK http://dx.doi.org/https://doi.org/10.1109/access.2021.3102687 DO https://doi.org/10.1109/access.2021.3102687 SF ELIB - SuUB Bremen
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