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Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁−ₓN/In₀.₁₂Al₀.₈₈N..:
Ke, Jian-Hong
;
Lee, Ching-Sung
;
Liu, Han-Yin
..
IEEE Access. 12 (2024) - p. 50177-50183 , 2024
Link:
https://doi.org/10.1109/access.2024.3384390
RT Journal T1
Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁−ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_access.2024.3384390&Exemplar=1&LAN=DE A1 Ke, Jian-Hong A1 Lee, Ching-Sung A1 Liu, Han-Yin A1 Tsai, Jung-Hui A1 Hsu, Wei-Chou PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 2169-3536 JF IEEE Access VO 12 SP 50177 OP 50183 LK http://dx.doi.org/https://doi.org/10.1109/access.2024.3384390 DO https://doi.org/10.1109/access.2024.3384390 SF ELIB - SuUB Bremen
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