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1 Ergebnisse
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Characterization of High-Performance InGaAs QW-MOSFETs With..:
Eom, Su-Keun
;
Kong, Min-Woo
;
Cha, Ho-Young
.
IEEE Journal of the Electron Devices Society. 7 (2019) - p. 908-913 , 2019
Link:
https://doi.org/10.1109/jeds.2019.2934745
RT Journal T1 <Title>Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfOxNy Gate Stack</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2019.2934745&Exemplar=1&LAN=DE A1 Eom, Su-Keun A1 Kong, Min-Woo A1 Cha, Ho-Young A1 Seo, Kwang-Seok PB Institute of Electrical and Electronics Engineers (IEEE) YR 2019 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 7 SP 908 OP 913 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2019.2934745 DO https://doi.org/10.1109/jeds.2019.2934745 SF ELIB - SuUB Bremen
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